型号/规格： CS20N60FA9H
主要应用领域：电源适配器，隔离式的LED驱动，电动车充电器，LCD电源 Silicon N-Channel Power MOSFET
CS20N60FA9H
General Description：
CS20N60FA9H, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor can
be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-220F, which accords with the RoHS standard..
Features：
竛 Fast Switching
竛 Low ON Resistance(Rdson≤0.45Ω)
竛 Low Gate Charge (T*ical data:70nC)
竛 Low Reverse transfer capacitances(T*ical: 32pF)
竛 100% Single Pulse avalanche energy Test
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