50 Amps, 60 Volts N-CHANNEL POWER MOSFET
D*CRIPTION
The UTC 50N06 is three-terminal silicon device with current
conduction capability of about 50A, fast switching speed. Low
on-state resistance, breakdown voltage rating of 60V, and max
threshold voltages of 4 volt.
It is mainly suitable electronic ballast, and low power switching
mode power appliances.
FEATUR*
* RDS(ON) =23mΩ@VGS= 10 V
* Ultra low gate charge ( t*ical 30 nC )
* Low reverse transfer capacitance ( CRSS = t*ical 80 pF )
* Fast switching capability
* 100% avalanche energy specified
* Improved dv/dt capability
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