TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS VII)
• Low drain-source ON-resistance: RDS (ON) = 0.58 Ω (typ.)
• High forward transfer admittance: |Yfs| = 6.0 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 600 V)
• Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)