Wafer Diameter ----100mm
Wafer Thickness -----(290 &plu*n; 20)μm
Die Size -----(1.5 × 1.5)mm
Scribe Line Width---- 80μm
Gate Pad------ (220 × 220)μm
Cathode Pad -----(445 × 445)μm
metallization
Planar Side -------Al (2.0 – 2.2)μm
Collector Side----- Ti (0.1 &plu*n; 0.02)μm
Ni------ (0.5 &plu*n; 0.10)μm
Ag ------(0.6 &plu*n; 0.10)μm
Repetitive Peak Off-State Voltages（ VDRM,VRRM） ----600 /800V
RMS On-State Current IT (RMS) ------ 1A
Peak Non-repetitive Surge Current ITSM ------ 8A( Sine Wave, f = 50Hz,
t = 20ms, Tj =25°С)