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DatasheetsProduct PhotosCatalog DrawingsStandard PackageCategoryFamilySeriesFET T*eFET FeatureRds On (Max) @ Id, VgsDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25° CVgs(th) (Max) @ IdGate Charge (Qg) @ VgsInput Capacitance (Ciss) @ VdsPower - MaxMounting T*ePackage / CaseSupplier Device Package

IPx034N06L3 G

TO-220-3

MOSFET TO-220(AB), TO-220-3

500

Discrete Semiconductor Products

FETs - Single

OptiMOS™

MOSFET N-Channel, metal Oxide

Logic Level Gate

3.7 mOhm @ 90A, 10V

60V

90A

2.2V @ 93µA

79nC @ 4.5V

13000pF @ 30V

167W

Through Hole

TO-220-3

PG-TO220-3